high power pin diode series ? power rating up to multi kilowatts ? voltage rating up to 2.5 kilovolts ? low loss, low distortion through hf band ? very low thermal impedance and high dissipation capabilities ? surface mount stud and insulated stud packages ? non-magnetic packaging available description the high power pin diode series is available in surface mount stud and insulated stud packages. these pin di- ode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through hf band. due to a thick base width of the ?i? layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. these pin chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices. applications high power pin diodes are designed as switching ele- ments with frequencies through uhf band. applica- tions for these devices include antenna coupler, high power filter switches and magnetic resonance imaging (mri) switches. these devices are designed to with- stand very large cw and pulse power environments where cw and peak rf voltages are in the kilovolt range and are offered in rugged low thermal impedance, stud and insulated stud packages. model number breakdown voltage (i r =10a) v b (min) (volts) junction capacitance (v r =50v) c j (max) (pf) series resistance (500ma, 100 mhz) r s (max) (ohms) carrier lifetime (i r =6ma, i f =10ma) t l (typ) (sec) thermal resistance (max) (c/w) GC4600 1500 0.75 0.3 5 5 gc4601 1500 1.5 0.25 8 4 gc4602 2000 1.0 0.25 10 3 gc4603 2000 2.0 0.20 15 3 gc4604 2500 2.0 0.20 20 2 gc4605 2500 3.0 0.15 25 1 guaranteed specifications at 25c (typical) semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 79 control devices
high power pin diode series gc4601 gc4605 freq. = 100 mhz series resistance (ohms) typical series rs vs forward bias forward current (ma) 0.01 0.1 1 10 100 0.1 1 10 100 1000 freq. = 1 mhz typical c vs v j junction capacitance (pf) 0.1 1 10 0.1 10 100 1 reverse voltage (vr+phi) gc4601 gc4605 r c b a pill d style 171 stud b a d l c i h f g o j a d c n e b k m style 172 style 173 dim. inches min. max. a 0.304 0.316 b 0.254 0.270 c 0.245 0.255 d 0.023 0.031 e 0.221 0.252 f 0.281 0.350 g 0.245 0.255 h #6-40 unf-3a i 0.072 spline * 0.07 dp or slot j 0.120 0.130 k 0.007 0.009 l 0.025 0.035 m 0.128 0.137 n o 0.078 0.790 semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 80 control devices
|
